TOKYO. Renesas Electronics Corporation recently introduced the RH1NS200, an LTE NB-IoT (Narrowband Internet of Things) modem chipset specifically for operation on the networks of major Indian telecommunications carriers. The RH1NS200 chipset consumes 1uA in deep sleep mode to maximize battery life and includes an integrated EAL5+ (Evaluation Assurance Level) Secure Element (SE) that provides zero compromise on security to ensure the safety of end applications like power and water metering systems.

Tokyo, Japan. Renesas Electronics Corporation released information on its RAJ2930004AGM, a gate driver IC developed to operate high-voltage power devices such as IGBTs (Insulated Gate Bipolar Transistors) and SiC (Silicon Carbide) MOSFETs for electric vehicle (EV) inverters.

TOKYO, Japan ― Renesas Electronics Corporation announced the new RAJ2810024H12HPD, an automotive Intelligent Power Device (IPD) designed to efficiently control the power distribution of next-generation E/E (electrical/electronic) automotive architectures.

Tokyo, Japan. Renesas Electronics Corporation made available an automotive Intelligent Power Device (IPD), RAJ2810024H12HPD, for safe and flexible management of power dissemination in vehicles. The solution delivers the needs of next-generation E/E (electrical/electronic) architectures. It was designed in a TO-252-7 form factor which helps reduce the mounting vicinity by 40% when compared to the conventional TO-263.

TOKYO, Japan ― Renesas and Fixstars Corporation are jointly developing tools for autonomous drive and advanced driver-assistance systems (ADAS) that enable software simulation and optimization, specifically for the R-Car system-on-chip (SoC) devices from Renesas.

TOKYO. “High levels of integration and the flexibility of programmability helps manufacturers reduce component counts, saving board space and power,” said Susie Inouye, Principal Analyst at Databeans.  With this in mind, Renesas Electronics Corporation released its VersaClock 7 configurable clock generators with 8-12 differing outputs, an embedded crystal oscillator, 150fs typical RMS 12k-20MHz phase jitter, 1.8V/2.5V/3.3V flexible power rails, digital holdover and hitless switching, SPI / I2C/ SMBUS interface support, PCIe Gen 1-6 support, and up to 27 customizations of external EEPROM. All of this is included in a 5 x 5mm, 6 x 6 mm QFN form factor designed for robust computing, wired infrastructure, and data centers.

MUNICH, Germany and TOKYO, Japan ― Renesas Electronics announced the RAA270205 4x4-channel, 76-81GHz high-definition transceiver, a MMIC (monolithic microwave integrated circuit) transceiver designed for imaging radar, long-range forward-looking radar, 4D radar, and corner and central-processing radar architectures commonly known as  “satellite” automotive radar systems.